Abstract:
The present work consists of the deposition and characterization of thin films of indium oxide doped with tin
In
2O3
: Sn (ITO) by the electrodeposition method: Effect of annealing temperature.
The main objective of our work is to study the effect of annealing temperature on the various properties of
In
2O3
: Sn thin films. Three samples were prepared under the same experimental conditions and treated at three
different temperatures (200, 300 and 400 °C).
Diffraction analysis showed that all the elaborated films present only the In2O3
phase in its cubic structure,
therefore these layers are monophasic. The film annealed at 200 °C presents its most intense peak along the
(440) direction while the other two films have their most intense peak along the (222) direction. The gap energy
of the three layers is almost constant; it varies from 3.89 eV to 3.94 eV. These values are relatively high, which
indicates that these films do not absorb in the visible region of the solar spectrum, and the elaborated layers can
be used in the manufacture of the window layer of the thin film solar cell.
Keywords: In
2O3
:Sn - Electrodeposition - Thin film - Annealing temperature.
